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| SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - DECEMBER 1995 FEATURES * 200 Volt VDS * RDS(on)= 25 7 ZVN3320F S D G PARTMARKING DETAIL - MU ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb =25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 200 60 1 20 330 -55 to +150 SOT23 UNIT V mA A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance(1) (2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS 200 1.0 3.0 100 10 50 250 25 75 45 18 5 5 7 6 6 MAX. UNIT CONDITIONS. V V nA A A mA mS pF pF pF ns ns ns ns V DD 25V, I D =100mA V DS =25V, V GS =0V, f=1MHz I D =1mA, V GS =0V I D =1mA, V DS = V GS V GS = 20V, V DS =0V V DS =200V, V GS =0V V DS =160V, V GS =0V, T=125C(2) V DS =25V, V GS =10V V GS =10V,I D =100mA V DS =25V,I D =100mA I D(on) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3 - 398 |
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